Quasiparticle Corrections to the Electronic Properties of Anion Vacancies at GaAs(110) and InP(110)
نویسندگان
چکیده
منابع مشابه
Quasiparticle corrections to the electronic properties of anion vacancies at GaAs(110) and InP(110).
We propose a new method for calculating optical defect levels and thermodynamic charge-transition levels of point defects in semiconductors, which includes quasiparticle corrections to the Kohn-Sham eigenvalues of density-functional theory. Its applicability is demonstrated for anion vacancies at the (110) surfaces of III-V semiconductors. We find the (+/0) charge-transition level to be 0.49 eV...
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ژورنال
عنوان ژورنال: Physical Review Letters
سال: 2006
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.97.226401